Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p-InP (100) substrates

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High-resolution transmission electron microscopy (HRTEM) images, selected-area electron diffraction (SAED) patterns, and energy dispersive x-ray spectroscopy (EDS) profiles showed that P atoms accumulated due to thermal treatment on the top sides and in the heterointerface layers of ZnO thin films grown on p-InP (100) substrates, resulting in the formation of amorphous ZnO layers in the ZnO thin films. The formation mechanisms of the ZnO amorphous layers due to thermal treatment are described on the basis of the HRTEM, the SAED, and the EDS measurements. (c) 2008 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2008-04
Language
English
Article Type
Article
Keywords

OPTICAL-PROPERTIES; LASERS; SI; PHOTOLUMINESCENCE; NANOWIRES; EPITAXY; GAAS

Citation

JOURNAL OF APPLIED PHYSICS, v.103, no.8

ISSN
0021-8979
DOI
10.1063/1.2908874
URI
http://hdl.handle.net/10203/91572
Appears in Collection
MS-Journal Papers(저널논문)
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