Effect of first-stage temperature on Cu(In,Ga)Se-2 solar cells using the evaporation of binary selenide compounds

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Cu(In,Ga)Se-2 films were prepared by a three-stage process using the evaporation of In2Se3, Ga2Se3, Cu2Se, and Se. In the first stage, the (In,Ga)(2)Se-3 layer was deposited at the substrate temperatures of 150degreesC and 325degreesC by the evaporation of In2Se3, Ga2Se3, and Se. The CIGS film had small grains with a bi-layer morphology at 150degreesC, while the film had large grains without the bi-layer morphology at 325degreesC. As the first-stage temperature increased, the CdS/ Cu(In,Ga)Se2 solar efficiency was improved from 9.3% to 11.7% for 0.21 cm 2 active area. The efficiency improvement was attributed to the reduction of the recombination at the CdS/ Cu(In,Ga)Se-2 interface and recombination within Cu(In,Ga)Se-2 film bulk due to the increase of Cu(In,Ga)Se-2 grain size. These findings were supported by the increased hole density, reduced reverse saturation current, and enhanced spectral response with increasing the first-stage temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2003-01
Language
English
Article Type
Article
Citation

SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.75, no.1-2, pp.73 - 79

ISSN
0927-0248
URI
http://hdl.handle.net/10203/9157
Appears in Collection
MS-Journal Papers(저널논문)
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