Approach to improve ZnO-based FBAR devices

Cited 3 time in webofscience Cited 0 time in scopus
  • Hit : 301
  • Download : 0
Presented is a new technique to improve the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices. The FBAR devices were fabricated on multilayer Bragg reflectors into which ultra-thin chromium (Cr) adhesion layers were inserted, followed by several kinds of thermal annealing processes. This technique resulted in excellent device improvement in terms of return loss and Q-factors.
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2007-06
Language
English
Article Type
Article
Citation

ELECTRONICS LETTERS, v.43, pp.735 - 737

ISSN
0013-5194
DOI
10.1049/el:20070914
URI
http://hdl.handle.net/10203/90910
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 3 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0