Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Joo, MS | ko |
| dc.contributor.author | Cho, Byung Jin | ko |
| dc.contributor.author | Balasubramanian, N | ko |
| dc.contributor.author | Kwong, DL | ko |
| dc.date.accessioned | 2013-03-07T12:55:16Z | - |
| dc.date.available | 2013-03-07T12:55:16Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-12 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/90218 | - |
| dc.description.abstract | Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (C-crit) above which there is no Fermi-level pinning, and the C-crit depends on the underlying gate dielectric material also. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000233681700008 | - |
| dc.identifier.scopusid | 2-s2.0-29244476905 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 26 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 882 | - |
| dc.citation.endingpage | 884 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/LED.2005.859631 | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Joo, MS | - |
| dc.contributor.nonIdAuthor | Balasubramanian, N | - |
| dc.contributor.nonIdAuthor | Kwong, DL | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | effective work function | - |
| dc.subject.keywordAuthor | fermi-level pinning | - |
| dc.subject.keywordAuthor | fully silicided (FUSI) gate | - |
| dc.subject.keywordAuthor | high-K | - |
| dc.subject.keywordAuthor | Ni-silicided gate | - |
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