Microstructural investigation of SexTe100-x thin films deposited on Si(100) substrates by x-ray diffractometer and transmission electron Microscopy analysis

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The microstructural properties of SexTe100-x (x = 16, 29, 38) thin films are investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. SexTe100-x, thin films have a Te hexagonal structure and Te{011} interplanar spacing decreases because some Se atoms occupy Te atomic sites, forming Se helical chains within the Te helical chains. By increasing the Se contents from 16 to 29 at. %, Se5.95Te1.05 monoclinic and Se hexagonal structures coexist in a grain and at 38 at. %, a Se hexagonal structure is observed within the Te hexagonal grain. This means that SexTe100-x thin films maintain the Te hexagonal structure and that phase separation does not occur owing to the short diffusion time.
Publisher
INST PURE APPLIED PHYSICS
Issue Date
2007-11
Language
English
Article Type
Article
Keywords

CONDUCTIVITY; ALLOY; SETE

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, pp.7392 - 7395

ISSN
0021-4922
DOI
10.1143/JJAP.46.7392
URI
http://hdl.handle.net/10203/90013
Appears in Collection
MS-Journal Papers(저널논문)
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