DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JW | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Jung, JH | ko |
dc.contributor.author | Lee, I | ko |
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Kim, MD | ko |
dc.date.accessioned | 2013-03-07T10:11:43Z | - |
dc.date.available | 2013-03-07T10:11:43Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-10 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.91, pp.309 - 321 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/89947 | - |
dc.description.abstract | Bright-field transmission electron microscopy images, high-resolution transmission electron microscopy images, energy dispersive spectroscopy profiles, and high-resolution x-ray diffraction curves showed that a high density of ZnSe nanostructures with a small size was formed on the Cl-doped ZnSe thin films grown on GaAs substrates. The formation of the ZnSe nanostructures was attributed to the strain energy resulting from the existence of the compressive strain generated by the accumulation of Cl impurities on the surface of the ZnSe thin film and from the residual strain existing in the ZnSe thin film with a thin thickness. (C) 2007 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | QUANTUM DOTS | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | STACKING-FAULTS | - |
dc.subject | LASER-DIODES | - |
dc.subject | FABRICATION | - |
dc.subject | SURFACES | - |
dc.subject | LAYERS | - |
dc.subject | PHASE | - |
dc.subject | CDSE | - |
dc.title | Formation mechanisms of self-assembled ZnSe nanostructures on Cl-doped ZnSe thin films grown on (100) GaAs substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000249974100046 | - |
dc.identifier.scopusid | 2-s2.0-34948874906 | - |
dc.type.rims | ART | - |
dc.citation.volume | 91 | - |
dc.citation.beginningpage | 309 | - |
dc.citation.endingpage | 321 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2795081 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Shin, JW | - |
dc.contributor.nonIdAuthor | Jung, JH | - |
dc.contributor.nonIdAuthor | Lee, I | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.contributor.nonIdAuthor | Kim, MD | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | QUANTUM DOTS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | STACKING-FAULTS | - |
dc.subject.keywordPlus | LASER-DIODES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | CDSE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.