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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer

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dc.contributor.authorKim, TWko
dc.contributor.authorShin, JWko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorJung, JHko
dc.contributor.authorLee, JWko
dc.contributor.authorChoi, WKko
dc.contributor.authorJin, Sko
dc.date.accessioned2013-03-07T09:44:20Z-
dc.date.available2013-03-07T09:44:20Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.90, no.5, pp.153 - 157-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/89899-
dc.description.abstractElectron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO2 layer. When a ZnO thin film on a p-type Si with amorphous SiOx interface layer is subjected to a 900 degrees C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2xSi1-xO2 layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with similar to 7-10 nm diameter were formed and embedded within the SiO2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectQUANTUM-DOT-
dc.subjectROOM-TEMPERATURE-
dc.subjectCOULOMB-BLOCKADE-
dc.subjectFABRICATION-
dc.subjectTRANSISTORS-
dc.subjectMICROSCOPE-
dc.subjectMEMORY-
dc.subjectSYSTEM-
dc.subjectFIELD-
dc.titleElectron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer-
dc.typeArticle-
dc.identifier.wosid000243977300035-
dc.identifier.scopusid2-s2.0-33846981859-
dc.type.rimsART-
dc.citation.volume90-
dc.citation.issue5-
dc.citation.beginningpage153-
dc.citation.endingpage157-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2450650-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorShin, JW-
dc.contributor.nonIdAuthorJung, JH-
dc.contributor.nonIdAuthorLee, JW-
dc.contributor.nonIdAuthorChoi, WK-
dc.contributor.nonIdAuthorJin, S-
dc.type.journalArticleArticle-
dc.subject.keywordPlusQUANTUM-DOT-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusCOULOMB-BLOCKADE-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusMICROSCOPE-
dc.subject.keywordPlusSYSTEM-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusFIELD-
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