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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

The formation mechanism of periodic Zn nanocrystal arrays embedded in an amorphous layer by rapid electron beam irradiation

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dc.contributor.authorShin, Jae Wonko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorNo, Y. S.ko
dc.contributor.authorkim, T. W.ko
dc.contributor.authorChoi, W. K.ko
dc.contributor.authorJin, S.ko
dc.date.accessioned2013-03-07T06:18:13Z-
dc.date.available2013-03-07T06:18:13Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-07-
dc.identifier.citationNANOTECHNOLOGY, v.19, no.29-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10203/89578-
dc.description.abstractA periodic nano-island array of similar to 7 nm diameter Zn single crystals embedded in an amorphous Zn(2x)Si(1-x)O(2) layer was created by using rapid electron beam irradiation for 50 s. A sequential process of 900 degrees C thermal annealing followed by electron beam irradiation induces the formation of an amorphous Zn(2x)Si(1-x)O(2) layer containing periodic Zn nanocrystals. It is shown that the periodic Zn crystal array can be produced with good control of their size and spacing. Possible formation mechanisms for the Zn crystal nano-islands are described on the basis of the experimental results.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectSILICON NANOCRYSTALS-
dc.subjectROOM-TEMPERATURE-
dc.subjectSTIMULATED DESORPTION-
dc.subjectMEMORY-
dc.subjectSIO2-
dc.subjectSPECTROSCOPY-
dc.subjectMICROSCOPE-
dc.subjectTRANSISTOR-
dc.subjectGOLD-
dc.subjectDOTS-
dc.titleThe formation mechanism of periodic Zn nanocrystal arrays embedded in an amorphous layer by rapid electron beam irradiation-
dc.typeArticle-
dc.identifier.wosid000256838300010-
dc.identifier.scopusid2-s2.0-47249161931-
dc.type.rimsART-
dc.citation.volume19-
dc.citation.issue29-
dc.citation.publicationnameNANOTECHNOLOGY-
dc.identifier.doi10.1088/0957-4484/19/29/295303-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorNo, Y. S.-
dc.contributor.nonIdAuthorkim, T. W.-
dc.contributor.nonIdAuthorChoi, W. K.-
dc.contributor.nonIdAuthorJin, S.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSILICON NANOCRYSTALS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusSTIMULATED DESORPTION-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusSIO2-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusMICROSCOPE-
dc.subject.keywordPlusTRANSISTOR-
dc.subject.keywordPlusGOLD-
dc.subject.keywordPlusDOTS-
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