Characterization of low-temperature stress hump in relation to phase formation sequence of nickel silicide

Abstract

The stress hump phenomenon observed at a low temperature of approximately 140 degreesC during in situ stress-temperature measurement of sputtered Ni thin film on a (001) Si substrate has been investigated. We found that the stress hump was not related to the formation of NiSi(2), but originated from the thickening of an amorphous Ni-Si intermixing layer in the temperature range of 100-140 degreesC followed by the formation of the Ni(2)Si phase at temperatutes above 140 degreesC.