DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Mincheol | ko |
dc.contributor.author | Lee, Jaehyun | ko |
dc.contributor.author | Ahn, Chiyui | ko |
dc.date.accessioned | 2013-03-07T02:14:55Z | - |
dc.date.available | 2013-03-07T02:14:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5389 - 5392 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/10203/89191 | - |
dc.description.abstract | Device simulations on three-dimensional top-gated carbon nanotube field effect transistors (CNTFETs) have been performed by considering the quantum transport described in the framework of non-equilibrium Green's function method. Device characteristics of various top-gated CNTFETs, such as Schottky-barrier CNTFETs, CNTFETs with doped source and drain, and tunnel-FET-like CNTFETs, have been examined, focusing on their scaling behavior as the channel length is ultimately reduced down to a few nanometers. Comparison with coaxially-gated devices is also made. | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | PERFORMANCE | - |
dc.title | Simulation Study of the Scaling Behavior of Top-Gated Carbon Nanotube Field Effect Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000261390500102 | - |
dc.identifier.scopusid | 2-s2.0-58149230073 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 5389 | - |
dc.citation.endingpage | 5392 | - |
dc.citation.publicationname | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Lee, Jaehyun | - |
dc.contributor.nonIdAuthor | Ahn, Chiyui | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Carbon Nanotube | - |
dc.subject.keywordAuthor | Field Effect Transistors | - |
dc.subject.keywordAuthor | Device Simulation | - |
dc.subject.keywordAuthor | Non-Equilibrium Green&apos | - |
dc.subject.keywordAuthor | s Function | - |
dc.subject.keywordPlus | PERFORMANCE | - |
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