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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Journal Papers(저널논문)

Plasma-assisted molecular-beam epitaxy of ZnO films on (0001) Al2O3: Effects of the MgO buffer layer thickness

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dc.contributor.authorKim, Jae Gooko
dc.contributor.authorHan, Seok Kyuko
dc.contributor.authorKang, Dong-Sukko
dc.contributor.authorYang, Sang Moko
dc.contributor.authorHong, Soon-Kuko
dc.contributor.authorLee, Jae Wookko
dc.contributor.authorLee, Jeong Yongko
dc.contributor.authorSong, Jung-Hoonko
dc.contributor.authorYao, Takafumiko
dc.date.accessioned2013-03-07T01:47:50Z-
dc.date.available2013-03-07T01:47:50Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-07-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.271 - 275-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/89140-
dc.description.abstractZnO films with MgO buffer layers were grown on (0001) Al2O3 by using plasma-assisted molecular beam epitaxy (PAMBE). We investigated the effect of the MgO buffer thickness on the growth of the ZnO films on (0001) Al2O3 by using PAMBE with neither intentional annealing of the MgO buffer nor low-temperature ZnO growth. The MgO buffer thickness strongly affected the crystal quality of the ZnO films. We believe that the crystal quality of the MgO buffer itself would be the most important factor affecting the crystal quality of the ZnO film on it.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectSUBSTRATE-
dc.subjectGROWTH-
dc.subjectTEMPERATURE-
dc.subjectAL2O3(0001)-
dc.titlePlasma-assisted molecular-beam epitaxy of ZnO films on (0001) Al2O3: Effects of the MgO buffer layer thickness-
dc.typeArticle-
dc.identifier.wosid000257664700059-
dc.identifier.scopusid2-s2.0-49649104067-
dc.type.rimsART-
dc.citation.volume53-
dc.citation.issue1-
dc.citation.beginningpage271-
dc.citation.endingpage275-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorLee, Jeong Yong-
dc.contributor.nonIdAuthorKim, Jae Goo-
dc.contributor.nonIdAuthorHan, Seok Kyu-
dc.contributor.nonIdAuthorKang, Dong-Suk-
dc.contributor.nonIdAuthorYang, Sang Mo-
dc.contributor.nonIdAuthorHong, Soon-Ku-
dc.contributor.nonIdAuthorLee, Jae Wook-
dc.contributor.nonIdAuthorSong, Jung-Hoon-
dc.contributor.nonIdAuthorYao, Takafumi-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthorepitaxy-
dc.subject.keywordAuthorMBE-
dc.subject.keywordAuthorbuffer-
dc.subject.keywordAuthorMgO-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusAL2O3(0001)-
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