Effects of annealing conditions on the crystallization and grain growth of metastable Ge2Sb2Te5
The Ge2Sb2Te5 thin films deposited by a sputtering method on a SiO2/Si substrate were annealed. and subjected to transmission electron microscopy in order to investigate the crystallization and growth of the metastable Ge2Sb2Te5. The metastable Ge2Sb2Te5 was initially crystallized with 10-nm-sized grains and its sheet resistance was still as high as in the amorphous state. Sheet resistance was abruptly decreased at the grain growth stage after the crystallization.
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Issue Date
- 2005-01
- Language
- English
- Article Type
- Article
- Keywords
THIN-FILMS; CRYSTAL NUCLEATION; MICROSCOPY
- Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.44, pp.326 - 327
- ISSN
- 0021-4922
- Appears in Collection
- MS-Journal Papers(저널논문)
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