Room temperature processable organic-inorganic hybrid photolithographic materials based on a methoxysilane cross-linker

Abstract

A novel room temperature processable organic inorganic hybrid resist material containing trimethoxysilyl group was synthesized by copolymerization of 3 methacryloxpropyl trimethoxysilane and gamma butyrolactonyl methacrylate. This new resist system does not need the post exposure baking step therby eliminating the post exposure delay problems. Protons generated from photoacid generators upon UV irradiation rotate the condensation of trimethoxysilyl groups resulting in siloxane networks in the exposed regions of the resist film. The negative tone siloxane pattern was used as a top imaging layer of a bilayer resist. The initial lithographic evaluation of the resist showed the potential of the new platform for the next generation resist.