Fabrication of Magnetic Tunnel Junctions With Co-2 FeSi Heusler Alloy and MgO Crystalline Barrier

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dc.contributor.authorLim, W. C.ko
dc.contributor.authorChoi, G. A.ko
dc.contributor.authorLee, Taek Dongko
dc.contributor.authorSeo, S. A.ko
dc.date.accessioned2013-03-06T23:49:23Z-
dc.date.available2013-03-06T23:49:23Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-11-
dc.identifier.citationIEEE TRANSACTIONS ON MAGNETICS, v.44, no.11, pp.2595 - 2597-
dc.identifier.issn0018-9464-
dc.identifier.urihttp://hdl.handle.net/10203/88863-
dc.description.abstractTunneling magnetoresistance (TMR) characteristics of magnetic tunnel junctions with a Co-2 FeSi electrode and an MgO crystalline barrier have been investigated. Co-2 FeSi Hensler alloy electrode grown on Cr-buffered MgO(100) substrate starts to have an L2(1) structure when annealed above 420 degrees C. In the cases of CoFeB/MgO/Co-2 FeSi junctions, a high TMR ratio of 158% has been achieved after annealing at 350 degrees C, which is obtained by coherent tunneling between the electrodes and barrier, not by the half-metallic nature of Co-2 FeSi Heusler alloy. However, the Co-2 FeSi Hensler alloy electrode degrades the TMR ratio when compared with an amorphous CoFeB electrode and the bottom Co-2 FeSi electrode makes more degradation of the TMR ratio than the top Co2FeSi electrode. The major reason for the low TMR ratio in Co-2 FeSi-based junctions is the broken epitaxial relationship between the bottom Co-2 FeSi electrodes and the MgO crystalline barrier, which is investigated by a cross-sectional transmission electron micrograph.-
dc.languageEnglish-
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc-
dc.subjectMAGNETORESISTANCE-
dc.subjectTEMPERATURE-
dc.subjectCO2FESI-
dc.titleFabrication of Magnetic Tunnel Junctions With Co-2 FeSi Heusler Alloy and MgO Crystalline Barrier-
dc.typeArticle-
dc.identifier.wosid000262221200036-
dc.identifier.scopusid2-s2.0-77955103655-
dc.type.rimsART-
dc.citation.volume44-
dc.citation.issue11-
dc.citation.beginningpage2595-
dc.citation.endingpage2597-
dc.citation.publicationnameIEEE TRANSACTIONS ON MAGNETICS-
dc.contributor.localauthorLee, Taek Dong-
dc.contributor.nonIdAuthorChoi, G. A.-
dc.contributor.nonIdAuthorSeo, S. A.-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorCo-2 FeSi Heusler alloy-
dc.subject.keywordAuthorMgO barrier-
dc.subject.keywordAuthortunneling magnetoresistance (TMR)-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusCO2FESI-
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