DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, W. C. | ko |
dc.contributor.author | Choi, G. A. | ko |
dc.contributor.author | Lee, Taek Dong | ko |
dc.contributor.author | Seo, S. A. | ko |
dc.date.accessioned | 2013-03-06T23:49:23Z | - |
dc.date.available | 2013-03-06T23:49:23Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-11 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON MAGNETICS, v.44, no.11, pp.2595 - 2597 | - |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | http://hdl.handle.net/10203/88863 | - |
dc.description.abstract | Tunneling magnetoresistance (TMR) characteristics of magnetic tunnel junctions with a Co-2 FeSi electrode and an MgO crystalline barrier have been investigated. Co-2 FeSi Hensler alloy electrode grown on Cr-buffered MgO(100) substrate starts to have an L2(1) structure when annealed above 420 degrees C. In the cases of CoFeB/MgO/Co-2 FeSi junctions, a high TMR ratio of 158% has been achieved after annealing at 350 degrees C, which is obtained by coherent tunneling between the electrodes and barrier, not by the half-metallic nature of Co-2 FeSi Heusler alloy. However, the Co-2 FeSi Hensler alloy electrode degrades the TMR ratio when compared with an amorphous CoFeB electrode and the bottom Co-2 FeSi electrode makes more degradation of the TMR ratio than the top Co2FeSi electrode. The major reason for the low TMR ratio in Co-2 FeSi-based junctions is the broken epitaxial relationship between the bottom Co-2 FeSi electrodes and the MgO crystalline barrier, which is investigated by a cross-sectional transmission electron micrograph. | - |
dc.language | English | - |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
dc.subject | MAGNETORESISTANCE | - |
dc.subject | TEMPERATURE | - |
dc.subject | CO2FESI | - |
dc.title | Fabrication of Magnetic Tunnel Junctions With Co-2 FeSi Heusler Alloy and MgO Crystalline Barrier | - |
dc.type | Article | - |
dc.identifier.wosid | 000262221200036 | - |
dc.identifier.scopusid | 2-s2.0-77955103655 | - |
dc.type.rims | ART | - |
dc.citation.volume | 44 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 2595 | - |
dc.citation.endingpage | 2597 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.contributor.localauthor | Lee, Taek Dong | - |
dc.contributor.nonIdAuthor | Choi, G. A. | - |
dc.contributor.nonIdAuthor | Seo, S. A. | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Co-2 FeSi Heusler alloy | - |
dc.subject.keywordAuthor | MgO barrier | - |
dc.subject.keywordAuthor | tunneling magnetoresistance (TMR) | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | CO2FESI | - |
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