Ge film growth in the presence of Sb by metal organic chemical vapor deposition

Abstract

The germanium films were deposited on TiAlN bottom electrode at various temperatures by metal organic chemical vapor deposition using Ge (allyl)(4) (Ge(C3H5)(4)) and Sb(iPr)(3)(Sb(C3H7)(3)) precursors. Deposition of germanium films was only possible by a catalytic role of Sb metal by a thermal decomposition of Sb(iPr)(3)(Sb(C3H7)(3)) precursors. Deposition rate of the Ge films increases with increasing Sb bubbling temperature at a substrate temperature of 370 S C. The deposition characteristics of Ge films were controlled by a surface reaction in the temperature range from 360 to 380 degrees C and were controlled by a mass transport in the range of 380-400 degrees C. The step coverage of Ge films in 500x200 nm(2) trench structure was approximately 93% at a substrate temperature of 370 degrees C. (C) 2007 American Institute of Physics.