Photo-Patternable Titanium Doped Organic-Inorganic Hybrid Gate Dielectric in Organic Thin Film Transistors

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Solution processable and photo-patternable titanium doped organic-inorganic hybrid material (MDT hybrimer) was prepared by simple sol-gel reaction for the gate dielectrics in organic thin film transistors (OTFTs). The MDT hybrimer is a typical nanocomposite which is fabricated via UV cross-linking of the nano-sized organo-oligosiloxanes. The photo-patternability of the MDT thin films was investigated using the UV light. The surface and electrical properties of MDT thin film were also investigated. The pentacene-based OTFT with MDT gate dielectrics was fabricated by using the top contact geometry. It is found that the OTFT with the MDT gate dielectrics showed a small hysteresis and good performance. The filed-effect mobility, threshold voltage, subthreshold slope and on/off current ratio of OTFT with MDT gate dielectric were 0.66 cm(2)V(-1)s(-1), -14 V 1.6 Vdec.(-1), and 3 x 10(6), respectively.
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2008-09
Language
English
Article Type
Article; Proceedings Paper
Keywords

FIELD-EFFECT TRANSISTORS; SI-29 NMR

Citation

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.9, pp.4679 - 4683

ISSN
1533-4880
URI
http://hdl.handle.net/10203/88355
Appears in Collection
MS-Journal Papers(저널논문)
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