DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seong, YH | ko |
dc.contributor.author | Kim, HN | ko |
dc.contributor.author | Kim, Do Kyung | ko |
dc.date.accessioned | 2013-03-06T17:58:44Z | - |
dc.date.available | 2013-03-06T17:58:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-12 | - |
dc.identifier.citation | KEY ENGINEERING MATERIALS, v.403, no.0, pp.121 - 123 | - |
dc.identifier.issn | 1013-9826 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87872 | - |
dc.description.abstract | β-SiAlON with various z-values (z = 0.5-4.0) were produced by hot pressing. The dielectric properties (dielectric constant and tangent loss) of β-SiAlON were characterized by the post-resonator method at room temperature and by the perturbation method from room temperature to 1200 °C at 2.45 GHz, respectively. Effect of z-values and temperatures with β-SiAlON were investigated. | - |
dc.language | English | - |
dc.publisher | Trans Tech Publications Ltd. | - |
dc.title | Dielectric Properties of β-SiAlON at High Temperature Using Perturbation Method | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-58849090985 | - |
dc.type.rims | ART | - |
dc.citation.volume | 403 | - |
dc.citation.issue | 0 | - |
dc.citation.beginningpage | 121 | - |
dc.citation.endingpage | 123 | - |
dc.citation.publicationname | KEY ENGINEERING MATERIALS | - |
dc.contributor.localauthor | Kim, Do Kyung | - |
dc.contributor.nonIdAuthor | Seong, YH | - |
dc.contributor.nonIdAuthor | Kim, HN | - |
dc.subject.keywordAuthor | Dielectric constant | - |
dc.subject.keywordAuthor | Perturbation method | - |
dc.subject.keywordAuthor | SiAlON | - |
dc.subject.keywordAuthor | Tangent loss | - |
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