DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon Y.H. | ko |
dc.contributor.author | Lee K.H. | ko |
dc.contributor.author | Ryu S.Y. | ko |
dc.contributor.author | Kang T.W. | ko |
dc.contributor.author | You C.H. | ko |
dc.contributor.author | Kim T.W. | ko |
dc.date.accessioned | 2013-03-06T17:25:48Z | - |
dc.date.available | 2013-03-06T17:25:48Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v.254, no.21, pp.7014 - 7017 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87775 | - |
dc.description.abstract | Scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) images, and selected-area electron diffraction (SAED) patterns showed that vertically well aligned GaN nanorods with c-axis-oriented crystalline wurzite structures were grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects and that they were consisted of {(1) over bar1 0 0}, {0 0 0 1}, and {(1) over bar 10} facets. The formation mechanisms for the GaN nanorods grown on Si(1 1 1) substrates are described on the basis of the SEM, TEM, SAED pattern, and HRTEM results. (C) 2008 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | NANOWIRES | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.title | Formation mechanisms of GaN nanorods grown on Si(111) substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000258997700058 | - |
dc.identifier.scopusid | 2-s2.0-49549100234 | - |
dc.type.rims | ART | - |
dc.citation.volume | 254 | - |
dc.citation.issue | 21 | - |
dc.citation.beginningpage | 7014 | - |
dc.citation.endingpage | 7017 | - |
dc.citation.publicationname | APPLIED SURFACE SCIENCE | - |
dc.identifier.doi | 10.1016/j.apsusc.2008.05.096 | - |
dc.contributor.localauthor | Lee K.H. | - |
dc.contributor.nonIdAuthor | Kwon Y.H. | - |
dc.contributor.nonIdAuthor | Ryu S.Y. | - |
dc.contributor.nonIdAuthor | Kang T.W. | - |
dc.contributor.nonIdAuthor | You C.H. | - |
dc.contributor.nonIdAuthor | Kim T.W. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | GaN nanorods | - |
dc.subject.keywordAuthor | microstructural properties | - |
dc.subject.keywordAuthor | formation mechanism | - |
dc.subject.keywordAuthor | hydride vapor phase epitaxy | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
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