DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SH | ko |
dc.contributor.author | Majhi, P | ko |
dc.contributor.author | Oh, J | ko |
dc.contributor.author | Sassman, B | ko |
dc.contributor.author | Young, C | ko |
dc.contributor.author | Bowonder, A | ko |
dc.contributor.author | Loh, WY | ko |
dc.contributor.author | Choi, KJ | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Lee, HD | ko |
dc.contributor.author | Kirsch, P | ko |
dc.contributor.author | Harris, HR | ko |
dc.contributor.author | Tsai, W | ko |
dc.contributor.author | Datta, S | ko |
dc.contributor.author | Tseng, HH | ko |
dc.contributor.author | Banerjee, SK | ko |
dc.contributor.author | Jammy, R | ko |
dc.date.accessioned | 2013-03-06T16:20:35Z | - |
dc.date.available | 2013-03-06T16:20:35Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-09 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87570 | - |
dc.description.abstract | High-performance sub-60 nm Si/SiGe (Ge: similar to 75%)/Si heterostructure quantum well pMOSFETs with a conventional MOSFET process flow, including gate-first high-kappa/metal gate stacks with similar to 1 nm equivalent oxide thickness, are demonstrated. For the first time, short gate length (L-g) devices demonstrate not only controlled short channel effects, but also an excellent on-off current (I-on/I-off) ratio (similar to 5 x 10(4) at 55-nm L-g). The intrinsic gate delay of these heterostructures is similar to 3 ps at I-on/I-off similar to 10(4). OFF-state leakage was minimized by controlling the defects in the epitaxial films. Finally, these short Lg devices, when benchmarked against state-of-the-art Si channel pMOSFETs, appear to be very promising in replacing the Si channel in CMOS scaling. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.subject | HIGH-PERFORMANCE PMOSFETS | - |
dc.subject | QUANTUM-WELLS | - |
dc.subject | P-MOSFETS | - |
dc.subject | TECHNOLOGY | - |
dc.subject | SILICON | - |
dc.subject | LAYERS | - |
dc.title | Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs) | - |
dc.type | Article | - |
dc.identifier.wosid | 000259573400015 | - |
dc.identifier.scopusid | 2-s2.0-50649109671 | - |
dc.type.rims | ART | - |
dc.citation.volume | 29 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1017 | - |
dc.citation.endingpage | 1020 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2008.2002073 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Lee, SH | - |
dc.contributor.nonIdAuthor | Majhi, P | - |
dc.contributor.nonIdAuthor | Oh, J | - |
dc.contributor.nonIdAuthor | Sassman, B | - |
dc.contributor.nonIdAuthor | Young, C | - |
dc.contributor.nonIdAuthor | Bowonder, A | - |
dc.contributor.nonIdAuthor | Loh, WY | - |
dc.contributor.nonIdAuthor | Choi, KJ | - |
dc.contributor.nonIdAuthor | Lee, HD | - |
dc.contributor.nonIdAuthor | Kirsch, P | - |
dc.contributor.nonIdAuthor | Harris, HR | - |
dc.contributor.nonIdAuthor | Tsai, W | - |
dc.contributor.nonIdAuthor | Datta, S | - |
dc.contributor.nonIdAuthor | Tseng, HH | - |
dc.contributor.nonIdAuthor | Banerjee, SK | - |
dc.contributor.nonIdAuthor | Jammy, R | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | band-to-band tunneling (BTBT) | - |
dc.subject.keywordAuthor | effective oxide thickness (EOT) | - |
dc.subject.keywordAuthor | intrinsic gate delay | - |
dc.subject.keywordAuthor | short channel effect (SCE) | - |
dc.subject.keywordAuthor | silicon germanium (SiGe) | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE PMOSFETS | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | P-MOSFETS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | LAYERS | - |
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