DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Woo-Jin | ko |
dc.contributor.author | Joon Goo, Kang | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-06T15:46:59Z | - |
dc.date.available | 2013-03-06T15:46:59Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-01 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.73, pp.024117 - 024117 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87479 | - |
dc.description.abstract | Based on first-principles pseudopotential calculations, we investigated the electronic structure of various P-related defects in ZnO and the p-type doping efficiency for two forms of P dopant sources such as P2O5 and Zn3P2. As compared to N dopants, a substitutional P at an O site has a higher ionization energy of about 0.62 eV, which makes it difficult to achieve p-type ZnO. Under Zn-rich growth conditions, P-O acceptors are compensated by dominant donors such as P-Zn, leading to n-type conduction. Although a P-Zn-2V(Zn) complex, which consists of a substitutional P at a Zn antisite and two Zn vacancies, acts as an acceptor, the formation of Zn vacancies is more probable on going to O-rich conditions for the dopant source using P2O5. On the other hand, when Zn3P2 is used as the P dopant source, the P-Zn-2V(Zn) complex is energetically more favorable and becomes the dominant acceptor under O-rich growth conditions. | - |
dc.language | English | - |
dc.publisher | AMERICAN PHYSICAL SOC | - |
dc.title | Defect properties and p-type doping efficiency in phosphorus-doped ZnO | - |
dc.type | Article | - |
dc.identifier.wosid | 000235009300034 | - |
dc.identifier.scopusid | 2-s2.0-33144467618 | - |
dc.type.rims | ART | - |
dc.citation.volume | 73 | - |
dc.citation.beginningpage | 024117 | - |
dc.citation.endingpage | 024117 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.identifier.doi | 10.1103/PhysRevB.73.024117 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | ELECTRON-GAS | - |
dc.subject.keywordPlus | NITROGEN | - |
dc.subject.keywordPlus | 1ST-PRINCIPLES | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | MGXZN1-XO | - |
dc.subject.keywordPlus | SUBSTRATE | - |
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