DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sun C.W. | ko |
dc.contributor.author | Youm M.S. | ko |
dc.contributor.author | Kim Y.T. | ko |
dc.date.accessioned | 2013-03-06T14:36:36Z | - |
dc.date.available | 2013-03-06T14:36:36Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007 | - |
dc.identifier.citation | JOURNAL OF PHYSICS-CONDENSED MATTER, v.19, no.44 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87272 | - |
dc.description.abstract | We investigated the properties of a Ge-Bi-Te ternary chalcogenide thin film which was deposited on a SiO2/Si substrate by varying RF-sputtering power on the GeTe and Bi target. The aim was to search for an appropriate candidate for a new phase change memory. Various analyses are conducted in order to investigate the composition, phase separation, and crystallization behavior of the Ge-Bi-Te alloy. The XRD results of each annealed sample showed that the Ge-Bi-Te alloy crystallized into Ge2Bi2Te5, GeBi2Te4, GeBi4Te7 phase at around 300 degrees C according to Ge content and expelled amorphous Ge crystallized as a single phase over 400 degrees C. Combining these with the differential scanning calorimetry (DSC) results, we demonstrated that T-c and T-m of the Ge-Bi-Te alloy are respectively higher and lower than those of conventional Ge-Sb-Te (GST) films. All the phases, including not only various Ge-Bi-Te ternary phases but also the Ge phase crystal structure, were also confirmed with high-resolution transmission electron microscopy (HR-TEM) images and diffraction patterns. It is noted that some of the Ge2Bi2Te5 grains show specific facetted planes such as {0113}, {0112}, and {0001}. Through successive analyses, we revealed the structural evolution of the Ge-Bi-Te alloy according to Ge contents and confirmed the potential of the Ge-Bi-Te alloy for phase-change random access memory (PRAM) applications. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | CHALCOGENIDE GLASSES | - |
dc.subject | TRANSITION | - |
dc.subject | GE2SB2TE5 | - |
dc.subject | SYSTEMS | - |
dc.subject | FILMS | - |
dc.title | Crystallization behavior of non-stoichiometric Ge-Bi-Te ternary phase change materials for PRAM application | - |
dc.type | Article | - |
dc.identifier.wosid | 000250688400016 | - |
dc.identifier.scopusid | 2-s2.0-36048970788 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.issue | 44 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS-CONDENSED MATTER | - |
dc.identifier.doi | 10.1088/0953-8984/19/44/446004 | - |
dc.contributor.localauthor | Sun C.W. | - |
dc.contributor.localauthor | Youm M.S. | - |
dc.contributor.localauthor | Kim Y.T. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHALCOGENIDE GLASSES | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | GE2SB2TE5 | - |
dc.subject.keywordPlus | SYSTEMS | - |
dc.subject.keywordPlus | FILMS | - |
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