DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko Park, Sang-Hee | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.contributor.author | Jeong, Hu Young | ko |
dc.contributor.author | Chu, Hye Yong | ko |
dc.contributor.author | Cho, Kyoung Ik | ko |
dc.date.accessioned | 2013-03-06T13:44:48Z | - |
dc.date.available | 2013-03-06T13:44:48Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.1, pp.H10 - H14 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87146 | - |
dc.description.abstract | Transparent ZnO thin film transistor (TFT) array of 176 x 144 (106 dpi) was fabricated on glass substrate. The V-th of the TFT with inverted coplanar structure is about 0.8 V and the mobility is 1.13 cm(2)/V s. The active layer (ZnO), gate insulator (Al2O3), and source-drain electrode (ZnO:Al) were deposited by atomic layer deposition. We also compared the performance of TFTs fabricated by lift-off and wet-etching process as the patterning processes of ZnO layer. The carrier density of the ZnO layer was carefully adjusted to reduce off-current of TFT. Good contact with small contact resistance was formed between the active layer and the source-drain electrode. (C) 2007 The Electrochemical Society. | - |
dc.language | English | - |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | ELECTRONICS | - |
dc.subject | CHANNEL | - |
dc.title | Transparent ZnO-TFT arrays fabricated by atomic layer deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000250983500018 | - |
dc.identifier.scopusid | 2-s2.0-36248989247 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | H10 | - |
dc.citation.endingpage | H14 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.2801017 | - |
dc.contributor.localauthor | Ko Park, Sang-Hee | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.contributor.nonIdAuthor | Chu, Hye Yong | - |
dc.contributor.nonIdAuthor | Cho, Kyoung Ik | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | CHANNEL | - |
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