Transmission electron microscopy (TEM), high-resolution TEM, and x-ray energy dispersive spectroscopy results showed that Zn metallic nanocrystals and ZnSiO(3) insulating nanocrytals embedded in a SiO(2) matrix were created from the ZnO thin films deposited on n-Si (001) substrates due to rapid thermal annealing. The formed Zn metallic nanocrystals were transformed into monoclinic ZnSiO(3) insulating nanocrystals with increasing number of Zn atoms resulting from an increase in the annealing time up to 10 min. The transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO(3) nanocrystals in a SiO(2) matrix due to rapid thermal annealing are described on the basis of the experimental results.