DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kang-Woon | ko |
dc.contributor.author | Kim, Yong-Il | ko |
dc.contributor.author | Lee, Won-Jong | ko |
dc.date.accessioned | 2013-03-06T11:39:14Z | - |
dc.date.available | 2013-03-06T11:39:14Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-03 | - |
dc.identifier.citation | JOURNAL OF MICROELECTRONICS AND ELECTRONIC PACKAGING, v.12, no.3, pp.219 - 226 | - |
dc.identifier.issn | 1226-9360 | - |
dc.identifier.uri | http://hdl.handle.net/10203/86867 | - |
dc.description.abstract | When a ferroelectric film has an inhomogeneous distribution of charged defects, a voltage shift in the polarization curve is induced by the internal field generated in the film. The direction and the magnitude of voltage shift in the P-V hysteresis curves obtained by the Sawyer-Tower method are different from those obtained by the virtual ground method. In this study, the asymmetric behavior in the P-V hysteresis curves of inhomogeneous ferroelectric films was investigated with a physical model and the polarization curves obtained by the Sawyer-Tower and the virtual ground methods are compared. | - |
dc.language | English | - |
dc.publisher | International Microelectronics And Packaging Society | - |
dc.title | Effects of asymmetric distribution of charged defects on the hysteresis curves of ferroelectric capacitors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 219 | - |
dc.citation.endingpage | 226 | - |
dc.citation.publicationname | JOURNAL OF MICROELECTRONICS AND ELECTRONIC PACKAGING | - |
dc.contributor.localauthor | Lee, Won-Jong | - |
dc.contributor.nonIdAuthor | Lee, Kang-Woon | - |
dc.contributor.nonIdAuthor | Kim, Yong-Il | - |
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