Characterization of Ultrathin Gate Dielectrics for Nanoscale CMOS ApplicationsCharacterization of Ultrathin Gate Dielectrics for Nanoscale CMOS Applications
- Publisher
- 한국정보통신학회
- Issue Date
- 2007-06
- Language
- Korean
- Citation
JOURNAL OF INFORMATION AND COMMUNICATION CONVERGENCE ENGINEERING, v.5, no.2, pp.109 - 111
- ISSN
- 1738-0235
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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