Cmos power cell with improved junction breakdown using interdigitated body contact

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dc.contributor.authorPark, Changkunko
dc.contributor.authorHan, Jeonghuko
dc.contributor.authorHong, Songcheolko
dc.date.accessioned2013-03-06T10:38:25Z-
dc.date.available2013-03-06T10:38:25Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-12-
dc.identifier.citationMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.49, no.12, pp.3085 - 3087-
dc.identifier.issn0895-2477-
dc.identifier.urihttp://hdl.handle.net/10203/86712-
dc.description.abstractA power-cell for RF power applications is designed using 0.35-mu m standard CMOS technology. An interdigitated body contact method is proposed and applied to a RF power-cell. A total gate width of the designed power-cell is 3.2 nun. The proposed RF power-cell has a higherjunction breakdown voltage than that of a conventional RF power-cell. The breakdown voltage of the proposed CMOS power-cell at zero gale voltage was,found to be similar to 8 V. (c) 2007 Wiley Periodicals, Inc.-
dc.languageEnglish-
dc.publisherJOHN WILEY & SONS INC-
dc.titleCmos power cell with improved junction breakdown using interdigitated body contact-
dc.typeArticle-
dc.identifier.wosid000250280000056-
dc.identifier.scopusid2-s2.0-36148973511-
dc.type.rimsART-
dc.citation.volume49-
dc.citation.issue12-
dc.citation.beginningpage3085-
dc.citation.endingpage3087-
dc.citation.publicationnameMICROWAVE AND OPTICAL TECHNOLOGY LETTERS-
dc.identifier.doi10.1002/mop.22908-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorPark, Changkun-
dc.contributor.nonIdAuthorHan, Jeonghu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorbody bias-
dc.subject.keywordAuthorbreakdown voltage-
dc.subject.keywordAuthorpower amplifier-
dc.subject.keywordAuthorpower cell-
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