DC Field | Value | Language |
---|---|---|
dc.contributor.author | Pu, J | ko |
dc.contributor.author | Kim, SJ | ko |
dc.contributor.author | Lee, SH | ko |
dc.contributor.author | Kim, YS | ko |
dc.contributor.author | Kim, ST | ko |
dc.contributor.author | Choi, KJ | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-06T07:07:13Z | - |
dc.date.available | 2013-03-06T07:07:13Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.688 - 690 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/86220 | - |
dc.description.abstract | We propose a novel approach to engineering floating gates (FGs) of Flash memory cells, namely, carbon incorporation into polysilicon FGs. This technique demonstrated an improvement in retention and a larger program/erase V(t) window, particularly for smaller capacitance coupling ratio cells, which is important for future scaled Flash memory cells. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.title | Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory | - |
dc.type | Article | - |
dc.identifier.wosid | 000257626000011 | - |
dc.identifier.scopusid | 2-s2.0-47249110745 | - |
dc.type.rims | ART | - |
dc.citation.volume | 29 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 688 | - |
dc.citation.endingpage | 690 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2008.2000600 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Pu, J | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
dc.contributor.nonIdAuthor | Lee, SH | - |
dc.contributor.nonIdAuthor | Kim, YS | - |
dc.contributor.nonIdAuthor | Kim, ST | - |
dc.contributor.nonIdAuthor | Choi, KJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | flash memory | - |
dc.subject.keywordAuthor | floating gate (FG) | - |
dc.subject.keywordAuthor | retention | - |
dc.subject.keywordAuthor | silicon carbide (SiC-3C) | - |
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