A low-power CAM using pulsed NAND-NOR match-line and charge-recycling search-line driver

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dc.contributor.authorYang, BDko
dc.contributor.authorKim, Lee-Supko
dc.date.accessioned2013-03-06T06:46:01Z-
dc.date.available2013-03-06T06:46:01Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-08-
dc.identifier.citationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.40, pp.1736 - 1744-
dc.identifier.issn0018-9200-
dc.identifier.urihttp://hdl.handle.net/10203/86172-
dc.description.abstractThis paper proposes a low-power CAM using pulsed NAND-NOR match-line and charge-recycling search-line. The pulsed NAND-NOR match-line not only significantly reduces the match-line power by activating only a few match-lines by using NAND cells for several bits but also achieves high speed by using NOR cells for most bits. The charge-recycling search-line driver reduces the search-line power by recycling the charge of search-lines without precharging. The CAM chip with 128 x 32 bit is fabricated in a 0.25-mu m CMOS process with 2.5 V. It dissipates 17.2 fJ/bit/search. It consumes 31% power of the dynamic NOR-type CAM.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectCONTENT-ADDRESSABLE-MEMORY-
dc.subjectSCHEME-
dc.titleA low-power CAM using pulsed NAND-NOR match-line and charge-recycling search-line driver-
dc.typeArticle-
dc.identifier.wosid000230761900017-
dc.identifier.scopusid2-s2.0-23744465803-
dc.type.rimsART-
dc.citation.volume40-
dc.citation.beginningpage1736-
dc.citation.endingpage1744-
dc.citation.publicationnameIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.identifier.doi10.1109/JSSC.2005.852028-
dc.contributor.localauthorKim, Lee-Sup-
dc.contributor.nonIdAuthorYang, BD-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCAM-
dc.subject.keywordAuthorcharge recycling-
dc.subject.keywordAuthorlow power-
dc.subject.keywordAuthormatch-line (ML)-
dc.subject.keywordAuthorsearch-line (SL)-
dc.subject.keywordPlusCONTENT-ADDRESSABLE-MEMORY-
dc.subject.keywordPlusSCHEME-
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