DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, DC | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kim, IS | ko |
dc.contributor.author | Kim, YT | ko |
dc.date.accessioned | 2013-03-06T04:41:42Z | - |
dc.date.available | 2013-03-06T04:41:42Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-01 | - |
dc.identifier.citation | JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.86, pp.149 - 151 | - |
dc.identifier.issn | 0002-7820 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85829 | - |
dc.description.abstract | During a rapid thermal annealing process at 850degreesC in a N-2 ambient, an as-deposited amorphous YMnO3 thin film on Si (100) substrates was crystallized with two distinct layers. High-resolution transmission electron microscopy showed a top layer of c-axis-oriented Y-MnO3 and a bottom layer of polycrystalline YMnO3 in the 100-nm-thick YMnO3 thin film. The abrupt change of the crystalline orientation from the c-axis-preferred orientation to the random orientation is caused primarily by high stress induced by the c-axis-oriented YMnO3 layer. High-resolution X-ray diffraction showed that the c-axis-oriented YMnO3/polycrystalline YMnO3 structure effectively relieved the stress. | - |
dc.language | English | - |
dc.publisher | BLACKWELL PUBLISHING | - |
dc.subject | NONVOLATILE MEMORY DEVICES | - |
dc.subject | FERROELECTRIC PROPERTIES | - |
dc.subject | SI | - |
dc.subject | MICROSTRUCTURE | - |
dc.subject | CANDIDATE | - |
dc.subject | GROWTH | - |
dc.title | Two-layer crystallization of amorphous YMnO3 thin films on Si(100) substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000180443100024 | - |
dc.identifier.scopusid | 2-s2.0-0037234751 | - |
dc.type.rims | ART | - |
dc.citation.volume | 86 | - |
dc.citation.beginningpage | 149 | - |
dc.citation.endingpage | 151 | - |
dc.citation.publicationname | JOURNAL OF THE AMERICAN CERAMIC SOCIETY | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Yoo, DC | - |
dc.contributor.nonIdAuthor | Kim, IS | - |
dc.contributor.nonIdAuthor | Kim, YT | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY DEVICES | - |
dc.subject.keywordPlus | FERROELECTRIC PROPERTIES | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | CANDIDATE | - |
dc.subject.keywordPlus | GROWTH | - |
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