DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Lee, DU | ko |
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kim, MD | ko |
dc.date.accessioned | 2013-03-06T04:25:15Z | - |
dc.date.available | 2013-03-06T04:25:15Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-02 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.89, no.4, pp.2503 - 2505 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85790 | - |
dc.description.abstract | Selected area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the ordered structures in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells (MQWs). The SADP showed two sets of extra spots with asymmetrical intensity, and the high-resolution TEM image showed doublet periodicity in the contrast of the (001) lattice planes. The results of the SADP and the TEM measurements showed that a CuAu-I-type ordered structure was observed near the lattice-mismatched InxGa1-xAs/InyAl1-yAs heterointerfaces. This CuAu-I-type ordered structure had an antiphase boundary in the periodically regular InxGa1-xAs/InyAl1-yAs lattice-mismatched region. The existence of a CuAu-I-type ordered structure in InxGa1-xAs/InyAl1-yAs MQWs might originate from the lattice mismatch between the InxGa1-xAs and the InyAl1-yAs layers. These results provide important information on the microstructural properties for improving operating efficiencies in long-wavelength optoelectronic devices, such as strain compensated electroabsorption modulators utilizing lattice-mismatched InxGa1-xAs/InyAl1-yAs MQWs. (C) 2001 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | LONG-RANGE ORDER | - |
dc.subject | STEP STRUCTURE | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | MODULATION | - |
dc.subject | ALLOYS | - |
dc.subject | LAYERS | - |
dc.subject | GAINP | - |
dc.title | Existence of a CuAu-I-type ordered structure in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells | - |
dc.type | Article | - |
dc.identifier.wosid | 000166688300076 | - |
dc.identifier.scopusid | 2-s2.0-0038493890 | - |
dc.type.rims | ART | - |
dc.citation.volume | 89 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 2503 | - |
dc.citation.endingpage | 2505 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Lee, DU | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.contributor.nonIdAuthor | Kim, MD | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | LONG-RANGE ORDER | - |
dc.subject.keywordPlus | STEP STRUCTURE | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | MODULATION | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | GAINP | - |
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