DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Il-Doo | ko |
dc.contributor.author | Han, KY | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.date.accessioned | 2013-03-06T04:12:20Z | - |
dc.date.available | 2013-03-06T04:12:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-02 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.2, pp.11 - 14 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85767 | - |
dc.description.abstract | The integration of ferroelectric capacitors into memory cells requires the bottom electrode material to be placed directly over a contact plug. LaSrCoO3 (LSCO) thin film was deposited using dc magnetron sputter-deposition as an electrode material and a diffusion barrier layer for Pb(Zr,Ti)O-3 (PZT) thin-film capacitors. The thermal stability and barrier property of LSCO/Ir/poly-Si and LSCO/Ru/poly-Si contact layers for oxygen diffusion were investigated by Auger electron spectroscopy to find a structure suitable for the bottom electrode of integrated ferroelectric capacitors. The LSCO/Ir/poly-Si composite stack showed lower resistivity compared to LSCO/Ru/poly-Si structure and provided good fatigue performance for PZT capacitors. From these results, the LSCO/Ir/Poly-Si is thought to be the available structure for the fabrication of high-density ferroelectric memory. (C) 2003 The Electrochemical Society. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | THIN-FILMS | - |
dc.subject | CAPACITORS | - |
dc.subject | ELECTRODES | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | TECHNOLOGY | - |
dc.subject | FATIGUE | - |
dc.subject | SILICON | - |
dc.subject | RU | - |
dc.title | Characterization of LSCO/Ir and LSCO/Ru structure as diffusion barrier layers for highly integrated memory devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000188080600010 | - |
dc.identifier.scopusid | 2-s2.0-1642585923 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 11 | - |
dc.citation.endingpage | 14 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.1634094 | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | Han, KY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | FATIGUE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | RU | - |
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