Characterization of Ni/Ce Co-doped BST thin film grown on LSCO/Pt electrodes prepared by pulsed laser deposition

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dc.contributor.authorKim, HSko
dc.contributor.authorKim, Il-Dooko
dc.contributor.authorLim, MHko
dc.contributor.authorLee, CHko
dc.contributor.authorKim, MSko
dc.contributor.authorKim, HGko
dc.date.accessioned2013-03-06T04:10:28Z-
dc.date.available2013-03-06T04:10:28Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-09-
dc.identifier.citationINTEGRATED FERROELECTRICS, v.55, no.5, pp.923 - 931-
dc.identifier.issn1058-4587-
dc.identifier.urihttp://hdl.handle.net/10203/85764-
dc.description.abstractPerovskite (Ba0.6Sr0.4)TiO3 (BST) thin films doped with Ni, Ce and Ni/Ce codopants were prepared on LSCO/Pt/SiO2 /Si substrates by pulsed laser deposition method. In this study, La0.5Sr0.5CoO3 (LSCO) bottom electrodes were used to improve the crystallinity and dielectric properties of BST films. Single ion doped(1 mol%Ni doped,1 mol%Ce doped) BST films showed more improved crystallinity, smoother surface, and smaller grain size than that with 1 mol%Ni/1 mol%Ce. The dielectric constant and loss of Ni/Ce co-doped BST films were about 298 and 1.8%, respectively. In addition, tunability and figure of merit of co-doped BST films showed minimum values of approximately 9.3% and 5, respectively. With 1% Ni-doped BST thin films, results gave a tunability of 54.2% and a loss tangent of 1.8% while a figure of merit was 30. Correlation of the material properties with dielectric and tunable properties suggests the 1 mol%Ni-doped BST films are effective potential candidate for tunable device applications.-
dc.languageEnglish-
dc.publisherTAYLOR FRANCIS LTD-
dc.subjectTUNABLE DEVICE APPLICATIONS-
dc.subjectSTRONTIUM-TITANATE-
dc.subjectSPACE-CHARGE-
dc.subjectCHEMISTRY-
dc.titleCharacterization of Ni/Ce Co-doped BST thin film grown on LSCO/Pt electrodes prepared by pulsed laser deposition-
dc.typeArticle-
dc.identifier.wosid000187625800019-
dc.identifier.scopusid2-s2.0-33751273201-
dc.type.rimsART-
dc.citation.volume55-
dc.citation.issue5-
dc.citation.beginningpage923-
dc.citation.endingpage931-
dc.citation.publicationnameINTEGRATED FERROELECTRICS-
dc.contributor.localauthorKim, Il-Doo-
dc.contributor.nonIdAuthorKim, HS-
dc.contributor.nonIdAuthorLim, MH-
dc.contributor.nonIdAuthorLee, CH-
dc.contributor.nonIdAuthorKim, MS-
dc.contributor.nonIdAuthorKim, HG-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusTUNABLE DEVICE APPLICATIONS-
dc.subject.keywordPlusSTRONTIUM-TITANATE-
dc.subject.keywordPlusSPACE-CHARGE-
dc.subject.keywordPlusCHEMISTRY-
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