DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, HS | ko |
dc.contributor.author | Kim, Il-Doo | ko |
dc.contributor.author | Lim, MH | ko |
dc.contributor.author | Lee, CH | ko |
dc.contributor.author | Kim, MS | ko |
dc.contributor.author | Kim, HG | ko |
dc.date.accessioned | 2013-03-06T04:10:28Z | - |
dc.date.available | 2013-03-06T04:10:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-09 | - |
dc.identifier.citation | INTEGRATED FERROELECTRICS, v.55, no.5, pp.923 - 931 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85764 | - |
dc.description.abstract | Perovskite (Ba0.6Sr0.4)TiO3 (BST) thin films doped with Ni, Ce and Ni/Ce codopants were prepared on LSCO/Pt/SiO2 /Si substrates by pulsed laser deposition method. In this study, La0.5Sr0.5CoO3 (LSCO) bottom electrodes were used to improve the crystallinity and dielectric properties of BST films. Single ion doped(1 mol%Ni doped,1 mol%Ce doped) BST films showed more improved crystallinity, smoother surface, and smaller grain size than that with 1 mol%Ni/1 mol%Ce. The dielectric constant and loss of Ni/Ce co-doped BST films were about 298 and 1.8%, respectively. In addition, tunability and figure of merit of co-doped BST films showed minimum values of approximately 9.3% and 5, respectively. With 1% Ni-doped BST thin films, results gave a tunability of 54.2% and a loss tangent of 1.8% while a figure of merit was 30. Correlation of the material properties with dielectric and tunable properties suggests the 1 mol%Ni-doped BST films are effective potential candidate for tunable device applications. | - |
dc.language | English | - |
dc.publisher | TAYLOR FRANCIS LTD | - |
dc.subject | TUNABLE DEVICE APPLICATIONS | - |
dc.subject | STRONTIUM-TITANATE | - |
dc.subject | SPACE-CHARGE | - |
dc.subject | CHEMISTRY | - |
dc.title | Characterization of Ni/Ce Co-doped BST thin film grown on LSCO/Pt electrodes prepared by pulsed laser deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000187625800019 | - |
dc.identifier.scopusid | 2-s2.0-33751273201 | - |
dc.type.rims | ART | - |
dc.citation.volume | 55 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 923 | - |
dc.citation.endingpage | 931 | - |
dc.citation.publicationname | INTEGRATED FERROELECTRICS | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.nonIdAuthor | Kim, HS | - |
dc.contributor.nonIdAuthor | Lim, MH | - |
dc.contributor.nonIdAuthor | Lee, CH | - |
dc.contributor.nonIdAuthor | Kim, MS | - |
dc.contributor.nonIdAuthor | Kim, HG | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | TUNABLE DEVICE APPLICATIONS | - |
dc.subject.keywordPlus | STRONTIUM-TITANATE | - |
dc.subject.keywordPlus | SPACE-CHARGE | - |
dc.subject.keywordPlus | CHEMISTRY | - |
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