DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Il-Doo | ko |
dc.contributor.author | Kim, HG | ko |
dc.date.accessioned | 2013-03-06T04:08:18Z | - |
dc.date.available | 2013-03-06T04:08:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-04 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4A, pp.2357 - 2362 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85759 | - |
dc.description.abstract | La0.5Sr0.5CoO3 (LSCO) and LaNi0.6Co0.4O3 (LNCO) thin films were deposited on Pt/Ti/SiO2/Si substrates by DC reactive sputtering at 450 degreesC and were annealed at temperatures ranging from 550 degreesC to 750 degreesC for 30 min in an O-2 ambient to improve the crystallinity of the films and to reduce their resistivity. LSCO and LNCO thin films were successfully prepared at temperatures as low as 450 degreesC. Pb(Zr0.48Ti0.52)O-3 (PZT) thin films of 150 nm thickness were deposited on the LSCO and LNCO electrodes by DC reactive sputtering at a substrate temperature of 550 degreesC. PZT films grown on LSCO and LNCO electrodes showed a (001) preferred orientation and had a uniform matrix of densely packed round grains. The leakage current density remained on the order of 10(-7)-10(-9) A/cm(2) at an applied voltage below 5 V. PZT thin films grown on LSCO/Pt showed a remanent polarization (2P(r)) of about 46-52 muC/cm(2), and a coercive voltage of about 1 V. PZT thin films grown on LNCO/Pt electrodes showed a lower coercive voltage (<0.6 V) and a smaller remanent polarization (2P(r)) of about 28.8 muC/cm(2) than those of PZT films grown on LSCO/Pt. LSCO/Pt and LNCO/Pt electrodes were essential for lowering the crystallization temperature as well as for obtaining good electrical properties of PZT capacitors. | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | O HETEROSTRUCTURES | - |
dc.subject | CAPACITORS | - |
dc.subject | MEMORY | - |
dc.title | Characterization of highly preferred Pb(Zr,Ti)O3 thin films on La0.5Sr0.5CoO3 and LaNi0.6Co0.4O3 electrodes prepared at low temperature | - |
dc.type | Article | - |
dc.identifier.wosid | 000170771700052 | - |
dc.identifier.scopusid | 2-s2.0-0035302399 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 4A | - |
dc.citation.beginningpage | 2357 | - |
dc.citation.endingpage | 2362 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.nonIdAuthor | Kim, HG | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ferroelectric properties | - |
dc.subject.keywordAuthor | LSCO | - |
dc.subject.keywordAuthor | LNCO | - |
dc.subject.keywordAuthor | low-temperature processing | - |
dc.subject.keywordAuthor | PZT | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | O HETEROSTRUCTURES | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | MEMORY | - |
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