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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Existence and atomic arrangement of microtwins in CdTe epilayers grown on GaAs (211) B substrates

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dc.contributor.authorKim, TWko
dc.contributor.authorLee, HSko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorRyu, YSko
dc.contributor.authorKang, TWko
dc.date.accessioned2013-03-06T04:02:00Z-
dc.date.available2013-03-06T04:02:00Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-02-
dc.identifier.citationSOLID STATE COMMUNICATIONS, v.129, pp.515 - 518-
dc.identifier.issn0038-1098-
dc.identifier.urihttp://hdl.handle.net/10203/85747-
dc.description.abstractSelected area electron diffraction pattern (SADP) and high-resolution transmission electron microscopy (HRTEM) measurements were carried out to investigate the existence and the atomic arrangement of microtwins in CdTe epilayers grown on GaAs (211) B substrates by using molecular beam epitaxy. The SADP results showed that an epitaxial relationship between the CdTe epilayer and the GaAs substrate was formed. The lattice of the CdTe (211) tilts about 2degrees with respect to the GaAs (211) B substrate about the CdTe [110] llGaAs [110] common zone axis. The HRTEM images showed that microtwins were formed in the CdTe epilayers. A possible atomic arrangement of the microtwins is presented on the basis of the HRTEM result. The present observations can help to improve understanding of the inicrostructural properties in CdTe epilayers grown on GaAs substrates. (C) 2003 Elsevier Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectFILMS-
dc.subjectGAAS-
dc.subjectHYDROGENATION-
dc.subjectORIENTATION-
dc.subjectLAYERS-
dc.titleExistence and atomic arrangement of microtwins in CdTe epilayers grown on GaAs (211) B substrates-
dc.typeArticle-
dc.identifier.wosid000188927800007-
dc.identifier.scopusid2-s2.0-0346154858-
dc.type.rimsART-
dc.citation.volume129-
dc.citation.beginningpage515-
dc.citation.endingpage518-
dc.citation.publicationnameSOLID STATE COMMUNICATIONS-
dc.identifier.doi10.1016/j.ssc.2003.11.047-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, TW-
dc.contributor.nonIdAuthorLee, HS-
dc.contributor.nonIdAuthorRyu, YS-
dc.contributor.nonIdAuthorKang, TW-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorheterostructures-
dc.subject.keywordAuthorepitaxy-
dc.subject.keywordAuthortransmission electron microscopy-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusHYDROGENATION-
dc.subject.keywordPlusORIENTATION-
dc.subject.keywordPlusLAYERS-
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