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Stability diagram of coupled single-electron transistors

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dc.contributor.authorShin, Mincheolko
dc.contributor.authorLee, SJko
dc.contributor.authorPark, KWko
dc.date.accessioned2013-03-04T23:33:50Z-
dc.date.available2013-03-04T23:33:50Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-09-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.3, pp.581 - 585-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/84645-
dc.description.abstractThe transformation of the stability diagram of parallel coupled single-electron transistors (SETs) with increasing coupling strength is studied theoretically. We have found that the binding of equal numbers of electrons and holes on two islands of the coupled SETs leads to a Coulomb-blockade due to the e-h pairs, resulting in an expansion of the insulating regions.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectSMALL TUNNEL-JUNCTIONS-
dc.subjectQUANTUM DOTS-
dc.subjectTRANSPORT-
dc.subjectCHARGE-
dc.subjectSYSTEM-
dc.subjectARRAYS-
dc.titleStability diagram of coupled single-electron transistors-
dc.typeArticle-
dc.identifier.wosid000171029700039-
dc.identifier.scopusid2-s2.0-0035540156-
dc.type.rimsART-
dc.citation.volume39-
dc.citation.issue3-
dc.citation.beginningpage581-
dc.citation.endingpage585-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorShin, Mincheol-
dc.contributor.nonIdAuthorLee, SJ-
dc.contributor.nonIdAuthorPark, KW-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusSMALL TUNNEL-JUNCTIONS-
dc.subject.keywordPlusQUANTUM DOTS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusCHARGE-
dc.subject.keywordPlusSYSTEM-
dc.subject.keywordPlusARRAYS-
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EE-Journal Papers(저널논문)
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