DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, B | ko |
dc.contributor.author | Chang, Hong-Young | ko |
dc.contributor.author | Song, JK | ko |
dc.contributor.author | Jeon, CW | ko |
dc.date.accessioned | 2013-03-04T20:42:16Z | - |
dc.date.available | 2013-03-04T20:42:16Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-11 | - |
dc.identifier.citation | PLASMA SOURCES SCIENCE TECHNOLOGY, v.11, no.4, pp.520 - 524 | - |
dc.identifier.issn | 0963-0252 | - |
dc.identifier.uri | http://hdl.handle.net/10203/84075 | - |
dc.description.abstract | A new type of a capacitively coupled plasma source was developed and tested to remove harmful film layers and particles deposited on a wafer's edge, bevel and back-side during film deposition or other semiconductor chip processes. Plasma was generated along 2 mm of an edge and 4 mm of the back-side of the wafer, thereby removing only films and particles on a wafer edge, bevel and back-side without damaging patterns inside the wafer. Etch rates over 10 000 Angstrom min(-1) for SiO2 and SiN films and rates over 6000 Angstrom min(-1) for polysilicon film were obtained. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Cleaning of wafer edge, bevel and back-side with a torus-shaped capacitively coupled plasma | - |
dc.type | Article | - |
dc.identifier.wosid | 000180018500019 | - |
dc.identifier.scopusid | 2-s2.0-0036861680 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 520 | - |
dc.citation.endingpage | 524 | - |
dc.citation.publicationname | PLASMA SOURCES SCIENCE TECHNOLOGY | - |
dc.contributor.localauthor | Chang, Hong-Young | - |
dc.contributor.nonIdAuthor | Jeon, B | - |
dc.contributor.nonIdAuthor | Song, JK | - |
dc.contributor.nonIdAuthor | Jeon, CW | - |
dc.type.journalArticle | Article | - |
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