DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, SY | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.date.accessioned | 2013-03-04T20:12:51Z | - |
dc.date.available | 2013-03-04T20:12:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-11 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.85, pp.4151 - 4153 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83958 | - |
dc.description.abstract | The effect of nanometer-scale spatial separation between Er3+ and Tm3+ ions in Er and Tm codoped silicon-rich silicon oxide (SRSO) films is investigated. Er and Tm codoped SRSO films, which consist of nanocluster Si (nc-Si) embedded inside SiO2 matrix, were fabricated with electron cyclotron resonance-plasma enhanced chemical vapor deposition of SiH4 and O-2 with concurrent sputtering of Er and Tm metal targets. Spatial separation between Er3+ and Tm3+ ions was achieved by depositing alternating layers of Er- and Tm-doped layers of varying thickness while keeping the total film thickness the same. The films display broadband infrared photoluminescence (PL) from 1.5 to 2.0 mum under a single source excitation due to simultaneous excitation of Er3+ and Tm3+ ions by nc-Si. Increasing the layer thickness from 0 to 72 nm increases the Er3+ PL intensity nearly 50-fold while the Tm3+ PL intensity is unaffected. The data are well-explained by a model assuming a dipole-dipole interaction between excited Er3+ and Tm3+ ions, and suggest that by nanoscale engineering, efficient, ultrabroadband infrared luminescence can be obtained in an optically homogeneous material using a single light source. (C) 2004 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SI NANOCRYSTALS | - |
dc.title | Controlling Er-Tm interaction in Er and Tm codoped silicon-rich silicon oxide using nanometer-scale spatial separation for efficient, broadband infrared luminescence | - |
dc.type | Article | - |
dc.identifier.wosid | 000224894900065 | - |
dc.identifier.scopusid | 2-s2.0-10044259895 | - |
dc.type.rims | ART | - |
dc.citation.volume | 85 | - |
dc.citation.beginningpage | 4151 | - |
dc.citation.endingpage | 4153 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1812578 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Seo, SY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SI NANOCRYSTALS | - |
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