DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, BW | ko |
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2013-03-04T18:47:11Z | - |
dc.date.available | 2013-03-04T18:47:11Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-02 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v.187, no.1-2, pp.45 - 50 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/10203/83690 | - |
dc.description.abstract | A CoSi2/TiN bilayer was coated on Si emitter tips and the emission characteristics of the tips were investigated. The CoSi2 layer was grown in situ by a reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt at 650 degreesC and then the TiN was deposited on the CoSi2 layer at 550 degreesC by a reactive sputtering of Ti with gas a reactive gas. The CoSi2 layer was conformally coated on the Si tips and the TiN layer adhered well to the CoSi2 layer. The CoSi2/MN-coated emitters showed a low turn-on voltage due to the low work function by TiN and a steep current increase caused by CoSi2. The current fluctuation of the CoSi2/TiN-coated Si emitter was smaller than that of the TiN-coated emitter. The long-term emission stability of the CoSi2/TiN-coated Si emitter was also greatly improved compared to the CoSi2-coated emitter because of the superior high temperature stability of the TiN layer. (C) 2002 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | ELECTRON-EMISSION | - |
dc.subject | POLYCRYSTALLINE SILICON | - |
dc.subject | DIFFUSION-BARRIERS | - |
dc.subject | ARRAYS | - |
dc.subject | TIN | - |
dc.subject | STABILITY | - |
dc.subject | SILICIDES | - |
dc.subject | DISPLAY | - |
dc.subject | FILMS | - |
dc.subject | COSI2 | - |
dc.title | Field emission characteristics of CoSi2/TiN-coated silicon emitter tips | - |
dc.type | Article | - |
dc.identifier.wosid | 000175089200005 | - |
dc.identifier.scopusid | 2-s2.0-0037075235 | - |
dc.type.rims | ART | - |
dc.citation.volume | 187 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 45 | - |
dc.citation.endingpage | 50 | - |
dc.citation.publicationname | APPLIED SURFACE SCIENCE | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Han, BW | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | field emission | - |
dc.subject.keywordAuthor | CoSi2/TiN-coated Si emitter | - |
dc.subject.keywordAuthor | work function | - |
dc.subject.keywordAuthor | emission stability | - |
dc.subject.keywordPlus | ELECTRON-EMISSION | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | DIFFUSION-BARRIERS | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | TIN | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | SILICIDES | - |
dc.subject.keywordPlus | DISPLAY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | COSI2 | - |
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