Shapes of InAs quantum dots on InGaAs/InP
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hwang, H | ko |
| dc.contributor.author | Yoon, S | ko |
| dc.contributor.author | Kwon, H | ko |
| dc.contributor.author | Yoon, E | ko |
| dc.contributor.author | Kim, HS | ko |
| dc.contributor.author | Lee, JeongYong | ko |
| dc.contributor.author | Cho, B | ko |
| dc.date.accessioned | 2013-03-04T14:15:46Z | - |
| dc.date.available | 2013-03-04T14:15:46Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2004-12 | - |
| dc.identifier.citation | APPLIED PHYSICS LETTERS, v.85, pp.6383 - 6385 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/82913 | - |
| dc.description.abstract | InAs self-assembled quantum dots were grown on InGaAs lattice-matched on InP by metalorganic chemical vapor deposition. The facet formation on the dot was investigated by atomic force microscopy and transmission electron microscopy. The {136}-faceted InAs dots were elongated along either [1 (3) over bar0] or [(3) over bar 10] to form parallelogram-shaped islands analogous to hut cluster formation in SiGe/Si quantum dots. Some parallelogram dots also exhibited {110} faceting, presumably on undergoing a shape transition toward dots with facets of higher symmetry. (C) 2004 American Institute of Physics. | - |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.subject | MOLECULAR-BEAM EPITAXY | - |
| dc.subject | AS/P EXCHANGE-REACTION | - |
| dc.subject | ELECTRONIC-STRUCTURE | - |
| dc.subject | STRAINED ISLANDS | - |
| dc.subject | GROWTH | - |
| dc.subject | GAAS | - |
| dc.subject | TRANSITION | - |
| dc.subject | INP | - |
| dc.subject | PHOTOLUMINESCENCE | - |
| dc.subject | MICROSCOPE | - |
| dc.title | Shapes of InAs quantum dots on InGaAs/InP | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000225785300021 | - |
| dc.identifier.scopusid | 2-s2.0-13444271843 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 85 | - |
| dc.citation.beginningpage | 6383 | - |
| dc.citation.endingpage | 6385 | - |
| dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
| dc.identifier.doi | 10.1063/1.1840123 | - |
| dc.contributor.localauthor | Lee, JeongYong | - |
| dc.contributor.nonIdAuthor | Hwang, H | - |
| dc.contributor.nonIdAuthor | Yoon, S | - |
| dc.contributor.nonIdAuthor | Kwon, H | - |
| dc.contributor.nonIdAuthor | Yoon, E | - |
| dc.contributor.nonIdAuthor | Kim, HS | - |
| dc.contributor.nonIdAuthor | Cho, B | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
| dc.subject.keywordPlus | AS/P EXCHANGE-REACTION | - |
| dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
| dc.subject.keywordPlus | STRAINED ISLANDS | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordPlus | GAAS | - |
| dc.subject.keywordPlus | TRANSITION | - |
| dc.subject.keywordPlus | INP | - |
| dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
| dc.subject.keywordPlus | MICROSCOPE | - |
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