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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Lattice structural analysis of hydrogen induced defects in SrBi2Nb2O9 thin films

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dc.contributor.authorKim, ISko
dc.contributor.authorKim, YTko
dc.contributor.authorKim, SIko
dc.contributor.authorYoo, DCko
dc.contributor.authorLee, JeongYongko
dc.date.accessioned2013-03-04T14:11:10Z-
dc.date.available2013-03-04T14:11:10Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2004-12-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.201, pp.R123 - R126-
dc.identifier.issn0031-8965-
dc.identifier.urihttp://hdl.handle.net/10203/82899-
dc.description.abstractWe have investigated the hydrogen-induced lattice deformation of SrBi2Nb2O9 (SBN) films with high resolution transmission electron microscopy (HR-TEM) and fast Fourier transformation (FFT) analysis. The deformation of the lattice sites is originated from the Bi-oxide layer interface and shifted up and down by 0.92 Angstrom compared with the normal sites in the {115} planes. This distorted perovskite structure results in the hydrogen induced degradation of ferroelectric properties. However, this lattice deformation and the ferroelectric degradation of SBN films are recovered after annealing in oxygen ambient. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectTRANSMISSION ELECTRON-MICROSCOPY-
dc.subjectINDUCED DEGRADATION-
dc.subjectFERROELECTRIC MEMORIES-
dc.titleLattice structural analysis of hydrogen induced defects in SrBi2Nb2O9 thin films-
dc.typeArticle-
dc.identifier.wosid000226038200002-
dc.identifier.scopusid2-s2.0-11444270811-
dc.type.rimsART-
dc.citation.volume201-
dc.citation.beginningpageR123-
dc.citation.endingpageR126-
dc.citation.publicationnamePHYSICA STATUS SOLIDI A-APPLIED RESEARCH-
dc.identifier.doi10.1002/pssa.200409075-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKim, IS-
dc.contributor.nonIdAuthorKim, YT-
dc.contributor.nonIdAuthorKim, SI-
dc.contributor.nonIdAuthorYoo, DC-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTRANSMISSION ELECTRON-MICROSCOPY-
dc.subject.keywordPlusINDUCED DEGRADATION-
dc.subject.keywordPlusFERROELECTRIC MEMORIES-
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