DC Field | Value | Language |
---|---|---|
dc.contributor.author | sangyeon han | ko |
dc.contributor.author | sung-il chang | ko |
dc.contributor.author | hyungcheol | ko |
dc.contributor.author | jongho lee | ko |
dc.date.accessioned | 2013-03-04T11:42:37Z | - |
dc.date.available | 2013-03-04T11:42:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-12 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.927 - 931 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82545 | - |
dc.description.abstract | We have developed a process of growing a radical oxide by using electron cyclotron resonance (ECR) N2O radical oxidation at 400 degreesC. The radical oxide was grown on a silicon substrate and then characterized. These oxides had large breakdown fields and small electron-trapping characteristics. The charge-to-breakdown characteristics (Q(BD)) up to 600 C/cm(2) under a negative constant current density of -40 mA/cm(2) were obtained. In order to investigate the possibility of using the radical oxide as a gate dielectric, we fabricated a NMOSFET with a floating side-gate structure, adopting this ECR N2O radical oxide as the gate dielectric and the inter-poly dielectric. Reasonable IV characteristics were obtained from the fabricated 50-nm device. From these results, the on-current I-ON was about 400 muA/mum at V-GS - V-TH = 1.5 V and V-DS = 1.5 V. This radical oxide can be applied to sub-0.1-mum Complementary Metal Oxide Semiconductor (CMOS) technology by optimizing the process conditions. | - |
dc.language | Korean | - |
dc.publisher | Korean Physical Soc | - |
dc.subject | PLASMA | - |
dc.title | Characteristics of an N2O Radical Oxide Grown by using Electron Cyclotron Resonance Radical Oxidation and Its Application to 50-nm MOSFETs with Floating Polysilicon Spacers | - |
dc.type | Article | - |
dc.identifier.wosid | 000179871300020 | - |
dc.identifier.scopusid | 2-s2.0-0036946639 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 927 | - |
dc.citation.endingpage | 931 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | hyungcheol | - |
dc.contributor.nonIdAuthor | sangyeon han | - |
dc.contributor.nonIdAuthor | sung-il chang | - |
dc.contributor.nonIdAuthor | jongho lee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ECR plasma | - |
dc.subject.keywordAuthor | radical oxide | - |
dc.subject.keywordAuthor | 50 nm | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | polysilicon spacer | - |
dc.subject.keywordAuthor | shallow junction | - |
dc.subject.keywordPlus | PLASMA | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.