Characteristics of an N2O Radical Oxide Grown by using Electron Cyclotron Resonance Radical Oxidation and Its Application to 50-nm MOSFETs with Floating Polysilicon Spacers

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dc.contributor.authorsangyeon hanko
dc.contributor.authorsung-il changko
dc.contributor.authorhyungcheolko
dc.contributor.authorjongho leeko
dc.date.accessioned2013-03-04T11:42:37Z-
dc.date.available2013-03-04T11:42:37Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-12-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.927 - 931-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/82545-
dc.description.abstractWe have developed a process of growing a radical oxide by using electron cyclotron resonance (ECR) N2O radical oxidation at 400 degreesC. The radical oxide was grown on a silicon substrate and then characterized. These oxides had large breakdown fields and small electron-trapping characteristics. The charge-to-breakdown characteristics (Q(BD)) up to 600 C/cm(2) under a negative constant current density of -40 mA/cm(2) were obtained. In order to investigate the possibility of using the radical oxide as a gate dielectric, we fabricated a NMOSFET with a floating side-gate structure, adopting this ECR N2O radical oxide as the gate dielectric and the inter-poly dielectric. Reasonable IV characteristics were obtained from the fabricated 50-nm device. From these results, the on-current I-ON was about 400 muA/mum at V-GS - V-TH = 1.5 V and V-DS = 1.5 V. This radical oxide can be applied to sub-0.1-mum Complementary Metal Oxide Semiconductor (CMOS) technology by optimizing the process conditions.-
dc.languageKorean-
dc.publisherKorean Physical Soc-
dc.subjectPLASMA-
dc.titleCharacteristics of an N2O Radical Oxide Grown by using Electron Cyclotron Resonance Radical Oxidation and Its Application to 50-nm MOSFETs with Floating Polysilicon Spacers-
dc.typeArticle-
dc.identifier.wosid000179871300020-
dc.identifier.scopusid2-s2.0-0036946639-
dc.type.rimsART-
dc.citation.volume41-
dc.citation.issue6-
dc.citation.beginningpage927-
dc.citation.endingpage931-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorhyungcheol-
dc.contributor.nonIdAuthorsangyeon han-
dc.contributor.nonIdAuthorsung-il chang-
dc.contributor.nonIdAuthorjongho lee-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorECR plasma-
dc.subject.keywordAuthorradical oxide-
dc.subject.keywordAuthor50 nm-
dc.subject.keywordAuthorMOSFET-
dc.subject.keywordAuthorpolysilicon spacer-
dc.subject.keywordAuthorshallow junction-
dc.subject.keywordPlusPLASMA-
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