DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lek, CM | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Ang, CH | ko |
dc.contributor.author | Tan, SS | ko |
dc.contributor.author | Loh, WY | ko |
dc.contributor.author | Zhen, JZ | ko |
dc.contributor.author | Lap, C | ko |
dc.date.accessioned | 2013-03-04T08:13:18Z | - |
dc.date.available | 2013-03-04T08:13:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-06 | - |
dc.identifier.citation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.17, no.6, pp.25 - 28 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82122 | - |
dc.description.abstract | The effect of high nitrogen concentration incorporation using decoupled plasma nitridation (DPN) of ultra-thin gate oxide (approximate to 15-17 Angstrom) on p-channel MOSFET performance has been investigated and compared with the conventional thermal nitridation process. Boron penetration is successfully suppressed in the ultra-thin gate dielectric prepared by the DPN process. This is confirmed by the measurements of gate leakage current, flat-band voltage shift and interface trap densities. The success in blocking boron penetration by DPN is attributed to its capability in incorporating a high level of nitrogen to near the top interface of the gate oxide. However, as a result of high level nitridation by DPN, a degradation in transconductance (Gm) is observed and interface trap density is also increased, compared to the conventional thermal nitridation process. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | BORON PENETRATION | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | SILICON GATE | - |
dc.subject | RELIABILITY | - |
dc.subject | NITROGEN | - |
dc.subject | INTERFACE | - |
dc.subject | DIFFUSION | - |
dc.title | Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs | - |
dc.type | Article | - |
dc.identifier.wosid | 000176642800001 | - |
dc.identifier.scopusid | 2-s2.0-0036610895 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 25 | - |
dc.citation.endingpage | 28 | - |
dc.citation.publicationname | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.identifier.doi | 10.1088/0268-1242/17/6/101 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Lek, CM | - |
dc.contributor.nonIdAuthor | Ang, CH | - |
dc.contributor.nonIdAuthor | Tan, SS | - |
dc.contributor.nonIdAuthor | Loh, WY | - |
dc.contributor.nonIdAuthor | Zhen, JZ | - |
dc.contributor.nonIdAuthor | Lap, C | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | BORON PENETRATION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | SILICON GATE | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | NITROGEN | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | DIFFUSION | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.