Direct current sputtering conditions for the growth of yttria-stabilized ZrO2 buffer layers of coated conductors

Abstract

The detailed conditions of direct current (dc) sputtering for depositions of yttria-stabilized ZrO2 (YSZ) films have been investigated, with the films grown on CeO2 template layers on biaxially textured Ni tapes. The range of oxygen pressure for proper growth of YSZ films, which is dependent on sputtering powers, was determined by sufficient oxidation of the YSZ films and the deoxidation of the target surface, which is required for rapid sputtering. The range turned out to be fairly wide under certain values of argon pressure. When the sputtering power was raised, the deposition rate increased without narrowing the range. The fabricated YSZ films showed good texture qualities and surface morphologies.