DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, HM | ko |
dc.contributor.author | Kim, DS | ko |
dc.contributor.author | Kim, DY | ko |
dc.contributor.author | Kang, TW | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Chung, KS | ko |
dc.date.accessioned | 2013-03-04T07:23:22Z | - |
dc.date.available | 2013-03-04T07:23:22Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-09 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.81, no.12, pp.2193 - 2195 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/81987 | - |
dc.description.abstract | Single-crystalline GaN nanorods are formed on a sapphire substrate by hydride vapor phase epitaxy (HVPE). Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and cathodoluminescence (CL) techniques. The high density of straight and well-aligned nanorods with a diameter of 80-120 nm formed uniformly over the entire 2 in. sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the formed GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. We observed a higher CL peak position of individual GaN nanorods than that of bulk GaN as well as a blueshift of CL peak position with decreasing the diameter of GaN nanorods, which are attributed to quantum confinement effect in one-dimensional GaN nanorods. We demonstrate that the well-aligned, single-crystalline GaN nanorods with high density, high crystal quality, and good spatial uniformity are formed by the HVPE method. (C) 2002 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | GALLIUM NITRIDE NANOWIRES | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | GAAS | - |
dc.title | Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | 000177911200017 | - |
dc.identifier.scopusid | 2-s2.0-79955990342 | - |
dc.type.rims | ART | - |
dc.citation.volume | 81 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 2193 | - |
dc.citation.endingpage | 2195 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1507617 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Kim, HM | - |
dc.contributor.nonIdAuthor | Kim, DS | - |
dc.contributor.nonIdAuthor | Kim, DY | - |
dc.contributor.nonIdAuthor | Kang, TW | - |
dc.contributor.nonIdAuthor | Chung, KS | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GALLIUM NITRIDE NANOWIRES | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | GAAS | - |
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