DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ding, SJ | ko |
dc.contributor.author | Hu, H | ko |
dc.contributor.author | Lim, HF | ko |
dc.contributor.author | Kim, SJ | ko |
dc.contributor.author | Yu, XF | ko |
dc.contributor.author | Zhu, CX | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Chan, DSH | ko |
dc.contributor.author | Rustagi, SC | ko |
dc.contributor.author | Yu, MB | ko |
dc.contributor.author | Chin, A | ko |
dc.contributor.author | Kwong, DL | ko |
dc.date.accessioned | 2013-03-04T04:11:15Z | - |
dc.date.available | 2013-03-04T04:11:15Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-12 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/81858 | - |
dc.description.abstract | For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al2O3 laminate dielectric' using atomic im layer deposition (ALD) technique. Our data indicates that the laminate NUM capacitor can provide high capacitance density of 12.8 fF/ mum(2) from 10 kHz up to 20 GHz, very low leakage current of 3.2 x 10(-8) A/cm(2) at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic. one of 1830 PPM/V-2, temperature coefficient of capacitance of 182 ppm/degreesC, and high breakdown field of similar to6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O3 laminate is a very promising candidate for next generation MINI capacitor for radio frequency and mixed signal integrated circuit applications. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000187845800003 | - |
dc.identifier.scopusid | 2-s2.0-9144263061 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 730 | - |
dc.citation.endingpage | 732 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2003.820664 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Ding, SJ | - |
dc.contributor.nonIdAuthor | Hu, H | - |
dc.contributor.nonIdAuthor | Lim, HF | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
dc.contributor.nonIdAuthor | Yu, XF | - |
dc.contributor.nonIdAuthor | Zhu, CX | - |
dc.contributor.nonIdAuthor | Chan, DSH | - |
dc.contributor.nonIdAuthor | Rustagi, SC | - |
dc.contributor.nonIdAuthor | Yu, MB | - |
dc.contributor.nonIdAuthor | Chin, A | - |
dc.contributor.nonIdAuthor | Kwong, DL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | atomic layer deposition (ALD) | - |
dc.subject.keywordAuthor | HfO2-Al2O3 laminate | - |
dc.subject.keywordAuthor | high-k | - |
dc.subject.keywordAuthor | metal-insulator-metal (MIM) capacitor | - |
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