DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, YJ | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2013-03-04T03:56:55Z | - |
dc.date.available | 2013-03-04T03:56:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-01 | - |
dc.identifier.citation | THIN SOLID FILMS, v.446, no.2, pp.227 - 231 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/81821 | - |
dc.description.abstract | Aluminum nitride (AlN) thin films were deposited by atomic layer deposition from aluminum chloride (AlCl3) and an ammonia/hydrogen plasma. The most important role of the ammonia/hydrogen plasma was to act as a reducing agent to extract Cl from AlCl3 and to form AlN subsequently. The growth rate was saturated at similar to0.042 nm/cycle, and the thickness was proportional to the number of reaction cycles. Repeating this reaction cycle led to precisely controlled growth. The film properties were analyzed using Auger electron spectroscopy, X-ray photoelectron spectroscopy, Rutherford backscattering spectroscopy and time-of-flight elastic recoil detection analysis. The concentration of chlorine and hydrogen impurities was 0.23 and 2.01 at.%, respectively. AlN films showed good anti-oxidation properties when O-2 was annealed at 650 degreesC for 30 min. (C) 2003 Elsevier B.V All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | ALN | - |
dc.subject | PRECURSORS | - |
dc.subject | PHASE | - |
dc.title | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000188057000010 | - |
dc.identifier.scopusid | 2-s2.0-0346750525 | - |
dc.type.rims | ART | - |
dc.citation.volume | 446 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 227 | - |
dc.citation.endingpage | 231 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.identifier.doi | 10.1016/j.tsf.2003.10.004 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Lee, YJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | aluminum nitride | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | adsorption | - |
dc.subject.keywordAuthor | surface-limited reaction | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | ALN | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.subject.keywordPlus | PHASE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.