DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chevaleevski, O | ko |
dc.contributor.author | Myong, SY | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2013-03-04T02:14:40Z | - |
dc.date.available | 2013-03-04T02:14:40Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-12 | - |
dc.identifier.citation | SOLID STATE COMMUNICATIONS, v.128, pp.355 - 358 | - |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.uri | http://hdl.handle.net/10203/81453 | - |
dc.description.abstract | Hydrogenated nanocrystalline silicon-carbide (nc-SiC:H) films with a varied carbon content have been prepared by a mercury-sensitized photo-assisted chemical vapor deposition (photo-CVD) technique. The structural analysis by Raman spectroscopy and X-ray diffraction indicated that the deposited material is composed of nanocrystalline silicon grains embedded into an amorphous matrix. The transport behavior and spin defect densities (N-S) of the films have been investigated by temperature dependent conductivity and electron spin resonance (ESR). It was found that during nc-SiC:H film growth the increase in carbon content (C-content) hinders the growth of a crystalline fraction. The decrease in film crystallinity caused by C-content increase (from 5 to 12 vol%) is accompanied by the decrease in spin densities from N-S approximate to 10(19) to N-S = 3 x 10(18) cm(-3) and diminishes the room temperature dark conductivity by two orders of magnitude. (C) 2003 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject | MICROCRYSTALLINE SILICON | - |
dc.subject | THIN-FILMS | - |
dc.subject | ELECTRONIC-PROPERTIES | - |
dc.subject | RESONANCE | - |
dc.subject | PASSIVATION | - |
dc.title | Spin defects and transport in hydrogenated nanocrystalline silicon carbide films produced by photo-CVD technique | - |
dc.type | Article | - |
dc.identifier.wosid | 000186266200007 | - |
dc.identifier.scopusid | 2-s2.0-0141988529 | - |
dc.type.rims | ART | - |
dc.citation.volume | 128 | - |
dc.citation.beginningpage | 355 | - |
dc.citation.endingpage | 358 | - |
dc.citation.publicationname | SOLID STATE COMMUNICATIONS | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Chevaleevski, O | - |
dc.contributor.nonIdAuthor | Myong, SY | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | semiconductors | - |
dc.subject.keywordAuthor | thin films | - |
dc.subject.keywordAuthor | electron paramagnetic resonance | - |
dc.subject.keywordPlus | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MICROCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | RESONANCE | - |
dc.subject.keywordPlus | PASSIVATION | - |
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