Nonvolatile memory characteristics of NMOSFET with siliver nanocrystals synthesized by thermal decomposition process

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dc.contributor.authorRyu, S.-W.ko
dc.contributor.authorMo, C.B.ko
dc.contributor.authorHong, S.H.ko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2007-07-04T01:26:10Z-
dc.date.available2007-07-04T01:26:10Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-10-22-
dc.identifier.citation2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, pp.518 - 519-
dc.identifier.urihttp://hdl.handle.net/10203/812-
dc.description.sponsorshipKorea Ministry of Science and Technology Information Display R&D Center, F0004240-2006-22 Ministry of Commerce, Industry and Energy of Korean Govenmenten
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleNonvolatile memory characteristics of NMOSFET with siliver nanocrystals synthesized by thermal decomposition process-
dc.typeConference-
dc.identifier.wosid000254409500185-
dc.identifier.scopusid2-s2.0-50249175864-
dc.type.rimsCONF-
dc.citation.beginningpage518-
dc.citation.endingpage519-
dc.citation.publicationname2006 IEEE Nanotechnology Materials and Devices Conference, NMDC-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationGyeongju-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorRyu, S.-W.-
dc.contributor.nonIdAuthorMo, C.B.-
dc.contributor.nonIdAuthorHong, S.H.-
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