DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, S.-W. | ko |
dc.contributor.author | Mo, C.B. | ko |
dc.contributor.author | Hong, S.H. | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2007-07-04T01:26:10Z | - |
dc.date.available | 2007-07-04T01:26:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-10-22 | - |
dc.identifier.citation | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, pp.518 - 519 | - |
dc.identifier.uri | http://hdl.handle.net/10203/812 | - |
dc.description.sponsorship | Korea Ministry of Science and Technology Information Display R&D Center, F0004240-2006-22 Ministry of Commerce, Industry and Energy of Korean Govenment | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE | - |
dc.title | Nonvolatile memory characteristics of NMOSFET with siliver nanocrystals synthesized by thermal decomposition process | - |
dc.type | Conference | - |
dc.identifier.wosid | 000254409500185 | - |
dc.identifier.scopusid | 2-s2.0-50249175864 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 518 | - |
dc.citation.endingpage | 519 | - |
dc.citation.publicationname | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC | - |
dc.identifier.conferencecountry | KO | - |
dc.identifier.conferencelocation | Gyeongju | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Ryu, S.-W. | - |
dc.contributor.nonIdAuthor | Mo, C.B. | - |
dc.contributor.nonIdAuthor | Hong, S.H. | - |
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