DC Field | Value | Language |
---|---|---|
dc.contributor.author | jae hyun | ko |
dc.contributor.author | hojin kim | ko |
dc.contributor.author | dojin kim | ko |
dc.contributor.author | young eon ihm | ko |
dc.contributor.author | Choo, Woong Kil | ko |
dc.date.accessioned | 2013-03-04T01:10:38Z | - |
dc.date.available | 2013-03-04T01:10:38Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-11 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.92, no.10, pp.6066 - 6071 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/81233 | - |
dc.description.abstract | We have characterized Zn1-xCoxO (x=0.25) films grown on sapphire (0001) substrates by pulsed laser deposition using various growth conditions to investigate the growth condition dependence of properties of Co-doped ZnO films. The substrate temperature (T-S) was varied from 300 to 700 degreesC and the O-2 pressure (P-O2) from 10(-6) to 10(-1) Torr. When T-S is relatively low (less than or similar to600 degreesC), homogeneous alloy films with a wurtzite ZnO structure are grown and predominantly paramagnetic, whereas inhomogeneous films of wurtzite ZnO phase mixed with rock-salt CoO and hexagonal Co phases form when T-S is relatively high and P-O2 is fairly low (less than or similar to10(-5) Torr). The presence of Co clusters leads to room temperature ferromagnetism in inhomogeneous films. The temperature dependence of the magnetization for the homogeneous Zn1-xCoxO (x=0.25) films shows spin-glass behavior at low temperature and high temperature Curie-Weiss behavior with a large negative value of the Curie-Weiss temperature, indicating strong antiferromagnetic exchange coupling between Co ions in Zn1-xCoxO. We have found that Co can be dissolved in ZnO over 40% under an optimum growth condition of T-S=600 degreesC and P-O2=10(-5) Torr, where epitaxial homogeneous Zn1-xCoxO (x=0.25) films of the best crystalline quality are obtained. (C) 2002 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | Amer Inst Physics | - |
dc.subject | III-V SEMICONDUCTORS | - |
dc.subject | MN-DOPED ZNO | - |
dc.subject | FERROMAGNETISM | - |
dc.subject | SUSCEPTIBILITY | - |
dc.title | MAGNETIC PROPERTIES OF EPITAXIALLY GROWN SEMICONDUCTING Zn1-XCoXO THIN FILMS BY PULSED LASER DEPOSITION | - |
dc.type | Article | - |
dc.identifier.wosid | 000178987200075 | - |
dc.identifier.scopusid | 2-s2.0-18744383020 | - |
dc.type.rims | ART | - |
dc.citation.volume | 92 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 6066 | - |
dc.citation.endingpage | 6071 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.nonIdAuthor | jae hyun | - |
dc.contributor.nonIdAuthor | hojin kim | - |
dc.contributor.nonIdAuthor | dojin kim | - |
dc.contributor.nonIdAuthor | young eon ihm | - |
dc.type.journalArticle | Article | - |
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