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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

MOCVD 성장조건이 InN/GaN 다층박막의 발광세기에 미치는 영향The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/GaN Multi-layers

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dc.contributor.author김현수ko
dc.contributor.author이정주ko
dc.contributor.author정순영ko
dc.contributor.author이정용ko
dc.contributor.authorJ.T.Linko
dc.contributor.authorH.X.Jiangko
dc.date.accessioned2013-03-04T00:39:44Z-
dc.date.available2013-03-04T00:39:44Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-03-
dc.identifier.citation한국재료학회지, v.12, no.3, pp.190 - 194-
dc.identifier.issn1225-0562-
dc.identifier.urihttp://hdl.handle.net/10203/81120-
dc.languageKorean-
dc.publisher한국재료학회-
dc.titleMOCVD 성장조건이 InN/GaN 다층박막의 발광세기에 미치는 영향-
dc.title.alternativeThe Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/GaN Multi-layers-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume12-
dc.citation.issue3-
dc.citation.beginningpage190-
dc.citation.endingpage194-
dc.citation.publicationname한국재료학회지-
dc.identifier.kciidART000993969-
dc.contributor.localauthor이정용-
dc.contributor.nonIdAuthor김현수-
dc.contributor.nonIdAuthor이정주-
dc.contributor.nonIdAuthor정순영-
dc.contributor.nonIdAuthorJ.T.Lin-
dc.contributor.nonIdAuthorH.X.Jiang-
dc.subject.keywordAuthorⅢ-nitride semiconductors-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorPhotoluminescence-
dc.subject.keywordAuthormulti-layers-
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MS-Journal Papers(저널논문)
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